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this document is a general product descripti on and is subject to change without notice. hynix semiconductor does not assume any responsibility for use of circuits described. no pat ent licenses are implied. rev. 1.2 / feb. 2006 1 200pin ddr sdram so-dimms ba sed on 512mb c ver. (fbga) features address table organization ranks sdrams # of drams # of row/bank/column address refresh method 1gb 128m x 64 2 64mb x 8 16 13(a0~a12)/2(ba0,ba1)/11(a0~a9,a11) 8k / 64ms performance range note: 1. 2.6v 0.1v vdd and vddq power supply for ddr400 and 2.5v 0.2v for ddr333 and below part-number suffix -d43 1 -j -h speed bin ddr400b ddr333 ddr266b cl - trcd- trp 3-3-3 2.5-3-3 2.5-3-3 max clock frequency cl=3 200 - - cl=2.5 166 166 133 cl=2 133 133 133 this hynix unbuffered small outline, dual in-line memo ry module (dimm) series consists of 512mb c ver. ddr sdrams in 60 ball fbga packages on a 200pin glass-epoxy substrate. this hynix 512mb c ver. based unbuffered so- dimm series provide a high performance 8 byte interface in 67 .60mm width form factor of industry standard. it is suit- able for easy interchange and addition. ? jedec standard 200-pin small outline, dual in-line memory module (so-dimm) ? two ranks 128m x 64 organization ?2.6v 0.1v vdd and vddq power supply for ddr400, 2.5v 0.2v for ddr333 and below ? all inputs and outputs are compatible with sstl_2 interface ? fully differential clock operations (ck & /ck) with 133/166/200mhz ? dll aligns dq and dqs transition with ck transition ? programmable cas latency : ddr266(2.5 clock), ddr333(2.5 clock), ddr400(3 clock) ? programmable burst length 2 / 4 / 8 with both sequential and interleave mode ? edge-aligned dqs with data outs and center-aligned dqs with data inputs ? auto refresh and self refresh supported ? 8192 refresh cycles / 64ms ? serial presence detect (spd) with eeprom ? built with 512mb ddr sdrams in 60 ball fbga pack- ages ? all lead-free products (rohs compliant)
rev. 1.2 / feb. 2006 2 11 200pin ddr sd ram so-dimms ordering information note: 1. the ?lead-free? products contain lead less than 0.1% by weight and satisfy rohs - please contact hynix for product availabili ty. * these products are built with hy5du124 (8,16)22c[l]fp the hynix ddr sdram component part number density organization # of drams material dimm dimension hymd512m646c[l]fp8-d43/j/h 1gb 128m x 8 16 lead-free 1 67.60 x 31.75 x 3.8 [mm 3 ]
rev. 1.2 / feb. 2006 3 11 200pin ddr sd ram so-dimms pin description pin assignment note: 1. * : these pins are not used in this module. 2. pin 167 is nc for 256mb, 512mb, and 1gb, or a13 for 2gb module. pin pin description pin pin description ck0, /ck0 differential clock inputs vddq dqs power supply /cs0, /cs1 chip select input vss ground cke0, cke1 clock enable inpu t vref reference power supply /ras, /cas, /we commend sets inputs vddspd power supply for spd a0 ~ a12 address sa0~sa2 e 2 prom address inputs ba0, ba1 bank address scl e 2 prom clock dq0~dq63 data inputs/outputs sda e 2 prom data i/o cb0~cb7 data strobe inputs/outputs wp write protect flag dqs0~dqs17 data strobe inputs/outputs vddid vdd identification flag dm0~7 data-in mask du do not use vdd power supply nc no connection /reset reset enable feten fet enable pin name pin name pin name pin name pin name pin name 1 vref 32 a5 62 vddq 93 vss 124 vss 154 /ras 2 dq0 33 dq24 63 /we 94 dq4 125 a6 155 dq45 3 vss 34 vss 64 dq41 95 dq5 126 dq28 156 vddq 4 dq1 35 dq25 65 /cas 96 vddq 127 dq29 157 /cs0 5 dqs0 36 dqs3 66 vss 97 dm0,dqs9 128 vddq 158 /cs1 6 dq2 37 a4 67 dqs5 98 dq6 129 dm3,dqs12 159 dm5,dqs14 7 vdd 38 vdd 68 dq42 99 dq7 130 a3 160 vss 8 dq3 39 dq26 69 dq43 100 vss 131 dq30 161 dq46 9 nc 40 dq27 70 vdd 101 nc 132 vss 162 dq47 10 /reset 41 a2 71 /cs2* 102 nc 133 dq31 163 nc 11 vss 42 vss 72 dq48 103 nc 134 cb4* 164 vddq 12 dq8 43 a1 73 dq49 104 vddq 135 cb5* 165 dq52 13 dq9 44 cb0* 74 vss 105 dq12 136 vddq 166 dq53 14 dqs1 45 cb1* 75 ck2* 106 dq13 137 ck0 167 a13 2 , nc 15 vddq 46 vdd 76 /ck2* 107 dm1,dqs10 138 /ck0 168 vdd 16 ck1* 47 dqs8 77 vddq 108 vdd 139 vss 169 dm6 17 /ck1* 48 a0 78 dqs6 109 dq14 140 dm8,dqs17 170 dq54 18 vss 49 cb2* 79 dq50 110 dq15 141 a10 171 dq55 19 dq10 50 vss 80 dq51 111 cke1 142 cb6* 172 vddq 20 dq11 51 cb3* 81 vss 112 vddq 143 vddq 173 nc 21 cke0 52 ba1 82 vddid 113 ba2* 144 cb7* 174 dq60 22 vddq key 83 dq56 114 dq20 key 175 dq61 23 dq16 53 dq32 84 dq57 115 a12 145 vss 176 vss 24 dq17 54 vddq 85 vdd 116 vss 146 dq36 177 dm7,dqs16 25 dqs2 55 dq33 86 dqs7 117 dq21 147 dq37 178 dq62 26 vss 56 dqs4 87 dq58 118 a11 148 vdd 179 dq63 27 a9 57 dq34 88 dq59 119 dm2,dqs11 149 dm4,dqs13 180 vddq 28 dq18 58 vss 89 vss 120 vdd 150 dq38 181 sa0 29 a7 59 ba0 90 nu 121 dq22 151 dq39 182 sa1 30 vddq 60 dq35 91 sda 122 a8 152 vss 183 sa2 31 dq19 61 dq40 92 scl 123 dq23 153 dq44 184 vddspd
rev. 1.2 / feb. 2006 4 11 200pin ddr sd ram so-dimms 1gb, 128m x 64 unbuffered so -dimm : hymd512m646c[l]fp8 functional block diagram dm /cs dqs d8 dm /cs dqs d9 dm /cs dqs dm /cs dqs dq0 dq1 dq2 dq3 dq4 dq5 dq6 dq7 /cs dqs d0 dq10 dq11 dq12 dq13 dq14 dq15 dm /cs dqs d1 dm /cs dqs d2 dq24 dq25 dq26 dq27 dq28 dq29 dq30 dq31 dm /cs dqs dq32 dq33 dq35 dq36 dq37 dq38 dq39 dm /cs dqs dq40 dq41 dq42 dq43 dq44 dq45 dq46 dq47 dm /cs dqs d5 dq48 dq49 dq50 dq51 dq52 dq53 dq54 dq55 dm /cs dqs dq56 dq57 dq58 dq59 dq60 dq61 dq62 dq63 dm /cs dqs d7 dm0 dqs0 dm4 dqs4 dq8 dq9 dm1 dqs1 dm2 dqs2 dm3 dqs3 dm7 dqs7 dm6 dqs6 dm5 dqs5 /cs0 dq16 dq17 dq18 dq19 dq20 dq21 dq22 dq23 dm /cs dqs d13 dm /cs dqs d15 dm /cs dqs d10 /cs1 d11 d3 d14 d6 d4 d1 2 dm /cs dqs i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 d12 dq34 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o0 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o0 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 i/o0 i/o1 i/o2 i/o3 i/o4 i/o5 i/o6 i/o7 dm strap:see note 4 vdd spd vdd /vddq vref vss vddid spd do-d15 do-d15 do-d15 ba0-ba1 a0-a12 /ras /cas cke0 /we ba0-ba1 : sdrams d0-d15 a0-a12 : sdrams d0-d15 /ras : sdrams d0-d15 /cas : sdrams d0-d15 cke : sdrams d0-d7 /we : sdrams d0-d15 cke1 cke : sdrams d8-d15 note : 1. dq-to-i/o wiring is shown as recommended but may be changed. 2. dq/dqs/dm/cke/s relationships must be maintained as shown. 3. dq, dqs, dm/dqs resistors : 22 ohms ? 5%. 4. vddid strap connections (for memory device vdd, vddq) : strap out (open) : vdd = vddq strap in (vss) : vdd vddq wp scl sda a0 a1 a2 sa0 sa1 sa2 serial pd ck0 8 loads /ck0 ck1 /ck1 ck2 /ck2 8 loads 0 loads
rev. 1.2 / feb. 2006 5 11 200pin ddr sd ram so-dimms absolute maximum ratings 1 note: 1. operation at above absolute maximum ra ting can adversely affe ct device reliability parameter symbol rating unit operating temperature (ambient) t a 0 ~ 70 o c storage temperature t stg -55 ~ 150 o c voltage on v dd relative to v ss v dd -1.0 ~ 3.6 v voltage on v ddq relative to v ss v ddq -1.0 ~ 3.6 v voltage on inputs relative to vss v input -1.0 ~ 3.6 v voltage on i/o pins realtive to vss v io -0.5 ~3.6 v output short circuit current ios 50 ma soldering temperature ? time t solder 260 ? 10 o c ? sec dc operating conditions (ta=0 to 70 o c, voltage referenced to v ss = 0v) note: 1. v ddq must not exceed the level of v dd . 2. for ddr400, vdd=2.6v 0.1v, vddq=2.6v 0.1v 3. v il (min) is acceptable -1.5v ac pulse width with < 5ns of duration. 4. vref is expected to be equal to 0.5*vddq of the transmitting device, and to track variations in the dc level of the same. p eak to peak noise on vref may not exceed 2% of the dc value. 5. vid is the magnitude of the difference between the input level on ck and the input level on /ck. 6. the ratio of the pullup current to the pulldown current is specified for the same temperature and voltage, over the entire tempera- ture and voltage range, for device drain to source voltages from 0.25v to 1.0v. for a given output, it represents the maximum d iffer- ence between pullup and pulldown drivers due to pr ocess variation. the full variation in the ratio of the maximum to minimum pullup and pulldown current will not exceed 1/7 for device drain to source voltages from 0.1 to 1.0. 7. vin=0 to vdd, all other pins are not tested under vin =0v. 8. dqs are disabled, vout=0 to vddq. parameter symbol min typ. max unit note power supply voltage (ddr 200, 266, 333) v dd 2.3 2.5 2.7 v power supply voltage (ddr 400) v dd 2.5 2.6 2.7 v 2 power supply voltage (ddr 200, 266, 333) v ddq 2.3 2.5 2.7 v 1 power supply voltage (ddr 400) v ddq 2.5 2.6 2.7 v 1,2 input high voltage v ih v ref + 0.15 - v ddq + 0.3 v input low voltage v il -0.3 - v ref - 0.15 v 3 termination voltage v tt v ref - 0.04 v ref v ref + 0.04 v reference voltage v ref 0.49*vddq 0.5*vddq 0.51*vddq v 4 input voltage level, ck and ck inputs vin(dc) -0.3 - vddq+0.3 v input differential voltage, ck and ck inputs vid(dc) 0.36 - vddq+0.6 v 5 v-i matching: pullup to pulldown current ratio vi(ratio) 0.71 - 1.4 - 6 input leakage current i li -2 - 2 ua 7 output leakage current i lo -5 - 5 ua 8 normal strength output driver (v out =vtt? 0.84 ) output high current (min vddq, min vref, min vtt) ioh -16.8 - - ma output low current (min vddq, max vref, max vtt) iol 16.8 - - ma half strength out- put driver (v out =vtt? 0.68 ) output high current (min vddq, min vref, min vtt) ioh -13.6 - - ma output low current (min vddq, max vref, max vtt) iol 13.6 - - ma
rev. 1.2 / feb. 2006 6 11 200pin ddr sd ram so-dimms idd specification and conditions (ta=0 to 70 o c, voltage referenced to v ss = 0v) 1gb, 128m x 64 unbuffered so-dimm: hymd512m646c[l]fp8 * module idd was calculated on the basis of component idd an d can be differently measured according to dq loading cap. symbol test condition speed unit note ddr400b ddr333 ddr266b idd0 one bank; active - precharge; trc=trc(min); tck=tck(min); dq,dm and dqs inputs changing twice per clock cycle; address and control inputs changing once per clock cycle 1520 1440 1280 ma idd1 one bank; active - read - precharge; burst length=2; trc=trc(min); tck=tck(min); address and control inputs changi ng once per clock cycle 1840 1680 1440 ma idd2p all banks idle; power down mode; cke=low, tck=tck(min) 160 ma idd2f /cs=high, all banks idle; tck=tck(min); cke= high; address and control inputs changing once per clock cycle. vin=vref for dq, dqs and dm 560 ma idd3p one bank active ; power down mode; cke=low, tck=tck(min) 720 ma idd3n /cs=high; cke=high; one bank; active-pre- charge; trc=tras(max); tck=tck(min); dq, dm and dqs inputs changing twice per clock cycle; address and other control inputs changing once per clock cycle 960 ma idd4r burst=2; reads; continuous burst; one bank active; address and control inputs changing once per clock cycle; tck=tck(min); iout=0ma 2160 2000 1840 ma idd4w burst=2; writes; continuous burst; one bank active; address and control inputs changing once per clock cycle; tck=tck(min); dq, dm and dqs inputs changing twice per clock cycle 2320 2160 1920 ma idd5 trc=trfc(min) - 8*tck for ddr200 at 100mhz, 10*tck for ddr266a & ddr266b at 133mhz; dis- tributed refresh 2560 2400 2240 ma idd6 cke=<0.2v; external clock on; tck =tck(min) normal 80 ma low power 48 ma idd7 four bank interleaving with bl=4 refer to the fol- lowing page for detailed test condition 3360 3280 3200 ma
rev. 1.2 / feb. 2006 7 11 200pin ddr sd ram so-dimms ac operating conditions (ta=0 to 70 o c, voltage referenced to v ss = 0v) note : 1. vid is the magnitude of the difference betw een the input level on ck and the input on /ck. 2. the value of vix is expected to equal 0.5*v ddq of the transmitting device and must track variations in the dc level of the same. ac operating test conditions (ta=0 to 70 o c, voltage referenced to vss = 0v) output load circuit parameter symbol min max unit note input high (logic 1) voltag e, dq, dqs and dm signals v ih(ac) v ref + 0.31 - v input low (logic 0) voltage, dq, dqs and dm signals v il(ac) -v ref - 0.31 v input differential voltage, ck and /ck inputs v id(ac) 0.7 v ddq + 0.6 v 1 input crossing point voltage, ck and /ck inputs v ix(ac) 0.5*v ddq -0.2 0.5*v ddq +0.2 v 2 parameter value unit reference voltage v ddq x 0.5 v termination voltage v ddq x 0.5 v ac input high level voltage (v ih , min) v ref + 0.31 v ac input low level voltage (v il , max) v ref - 0.31 v input timing measurement reference level voltage v ref v output timing measurement reference level voltage v tt v input signal maximum peak swing 1.5 v input minimum signal slew rate 1 v/ns termination resistor (r t )50 ? series resistor (r s )25 ? output load capacitance for access time measurement (c l )30 pf v ref v tt r t =50 ? zo=50 ? c l =30pf output
rev. 1.2 / feb. 2006 8 11 200pin ddr sd ram so-dimms capacitance (t a =25 o c, f=100mhz) 1gb : hymd512m646c[l]fp8 input/output pins symbol min max unit a0 ~ a12, ba0, ba1 c in1 50 68 pf /ras, /cas, /we c in2 50 68 pf cke0, cke1 c in3 36 48 pf /cs0, /cs1 c in4 36 48 pf ck0, /ck0, ck1, /ck1, ck2, /ck2 c in5 30 38 pf dm0 ~ dm7 c in6 10 18 pf dq0 ~ dq63, dqs0 ~ dqs7 c io1 10 18 pf
rev. 1.2 / feb. 2006 9 11 200pin ddr sd ram so-dimms ac characteristics (note: 1 - 9 / ac operating conditions unless otherwise noted) parameter symbol ddr400b ddr333 ddr266a ddr266b ddr200 unit min max min max min max min max min max row cycle time trc 55 - 60 - 65 - 65 - 70 - ns auto refresh row cycle time trfc 70 - 72 - 75 - 75 - 80 - ns row active time tras 40 70k 42 70k 45 120k 45 120k 50 120k ns active to read with auto precharge delay trap trcd or trasmin - trcd or trasmin - trcd or trasmin - trcd or trasmin - trcd or trasmin -ns row address to column address delay trcd 15 - 18 - 20 - 20 - 20 - ns row active to row active delay trrd 10 - 12 - 15 - 15 - 15 - ns column address to column address delay tccd1-1-1-1-1-tck row precharge time trp 15 - 18 - 20 - 20 - 20 - ns write recovery time twr 15 - 15 - 15 - 15 - 15 - ns internal write to read command delay twtr2-1-1-1-1-tck auto precharge write recovery + precharge time 22 tdal (twr/ tck) + (trp/tck) - (twr/ tck) + (trp/tck) - (twr/ tck) + (trp/tck) - (twr/ tck) + (trp/tck) - (twr/ tck) + (trp/tck) -tck system clock cycle time 24 cl = 3 tck 510-------- cl = 2.5 - - 6 12 7.5 12 7.5 12 8.0 12 ns cl = 2 - - 7.5127.51210121012ns clock high level width tch 0.45 0.55 0. 45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tck clock low level width tcl 0.45 0.55 0. 45 0.55 0.45 0.55 0.45 0.55 0.45 0.55 tck data-out edge to clock edge skew tac -0.7 0.7 -0.7 0.7 -0.75 0.75 -0.75 0.75 -0.75 0.75 ns dqs-out edge to clock edge skew tdqsck -0.55 0.55 -0.6 0.6 -0.75 0.75 -0.75 0.75 -0.75 0.75 ns dqs-out edge to data- out edge skew 21 tdqsq - 0.4 - 0.4 - 0.5 - 0.5 - 0.6 ns data-out hold time from dqs 20 tqh thp -tqhs - thp -tqhs - thp -tqhs - thp -tqhs - thp -tqhs -ns clock half period 19,20 thp min (tcl,tch) - min (tcl,tch) - min (tcl,tch) - min (tcl,tch) - min (tcl,tch) -ns data hold skew factor 20 tqhs - 0.5 - 0.5 - 0.75 - 0.75 - 0.75 ns valid data output window tdv tqh-tdqsq tqh-tdqsq tqh-tdqsq tqh-tdqsq tqh-tdqsq ns
rev. 1.2 / feb. 2006 10 11 200pin ddr sd ram so-dimms - continue parameter symbol ddr400b ddr333 ddr266a ddr266b ddr200 unit min max min max min max min max min max data-out high-impedance window from ck,/ck 10 thz -0.7 0.7 -0.7 0.7 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns data-out low-impedance window from ck, /ck 10 tlz -0.7 0.7 -0.7 0.7 -0.75 0.75 -0.75 0.75 -0.8 0.8 ns input setup time (fast slew rate) 14,16-18 tis 0.6 - 0.75 - 0.9 - 0.9 - 1.1 - ns input hold time (fast slew rate) 14,16-18 tih 0.6 - 0.75 - 0.9 - 0.9 - 1.1 - ns input setup time (slow slew rate) 15-18 tis 0.7 - 0.8 - 1.0 - 1.0 - 1.1 - ns input hold time (slow slew rate) 15-18 tih 0.7 - 0.8 - 1.0 - 1.0 - 1.1 - ns input pulse width 17 tipw 2.2 - 2.2 - 2.2 - 2.2 - 2.5 - ns write dqs high level width tdqsh 0.35 - 0.35 - 0.35 - 0.35 - 0.35 - tck write dqs low level width tdqsl 0.35 - 0.35 - 0.35 - 0.35 - 0.35 - tck clock to first rising edge of dqs- in tdqss 0.72 1.25 0.75 1.25 0.75 1.25 0.75 1.25 0.75 1.25 tck dqs falling edge to ck setup time tdss 0.2 -0.2 -0.2 -0.2 -0.2 -tck dqs falling edge hold time from ck tdsh 0.2 -0.2 -0.2 -0.2 -0.2 -tck dq & dm input setup time 25 tds 0.4 - 0.45 - 0.5 - 0.5 - 0.6 - ns dq & dm input hold time 25 tdh 0.4 - 0.45 - 0.5 - 0.5 - 0.6 - ns dq & dm input pulse width 17 tdipw 1.75 - 1.75 - 1.75 - 1.75 - 2 - ns read dqs preamble time trpre 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 0.9 1.1 tck read dqs postamble time trpst 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tck write dqs preamble setup time 12 twpres 0 -0-0- 0 -0 -ns write dqs preamble hold time twpreh 0.25 - 0.25 - 0.25 - 0.25 - 0.25 - tck write dqs postamble time 11 twpst 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 0.4 0.6 tck mode register set delay tmrd 2 -2-2- 2 -2 -tck exit self refresh to non-read command 23 txsnr 75 - 75 - 75 - 75 - 80 - ns exit self refresh to read command txsrd 200 - 200 - 200 - 200 - 200 - tck average periodic refresh interval 13,25 trefi - 7.8 - 7.8 - 7.8 - 7.8 - 7.8 us
rev. 1.2 / feb. 2006 11 11 200pin ddr sd ram so-dimms note: 1. all voltages referenced to vss. 2. tests for ac timing, idd, an d electrical, ac and dc characteristic s, may be conducted at nominal reference/supply voltage le vels, but the related specifications and device operation are guaranteed for the full voltage range specified. 3. below figure represents the timing reference load used in defining the relevant timing parameters of the part. it is not int ended to be either a precise representation of the typical system environment nor a depiction of the actual load pr esented by a producti on tester. system designers will use ibis or other simulation tools to correlate the timing reference load to a system environment . manufacturers will correlate to their production test conditions (generally a coaxial transmission line terminated at the teste r elec- tronics). 4. ac timing and idd tests may use a vil to vihswing of up to 1.5 v in the test environment, but input timing is still referenc ed to vref (or to the crossing point for ck, /ck), and parameter specif ications are guarant eed for the specified ac input levels unde r normal use conditions. the minimum slew rate for the input signals is 1 v/ns in the rang e between vil(ac) and vih(ac). 5. the ac and dc input level specifications are as defined in th e sstl_2 standard (i.e., the re ceiver will effectively switch a s a result of the signal crossing the ac input level and will remain in that state as long as the signal do es not ring back above (below) the dc input low (high) level. 6. inputs are not recognized as valid until vref stabilizes. exception: during the period before vref stabilizes, cke < 0.2vddq is recognized as low. 7. the ck, /ck input reference level (for timing referenced to ck, /ck) is the point at which ck and /ck cross; the input refer ence level for signals other than ck, /ck is vref. 8. the output timing reference voltage level is vtt. 9 . operation or timing that is not specified is illegal and after such an event, in order to guarantee proper operation, the dram must be powered down and then restarted through the specified initialization sequence before normal operation can continue. 10. thz and tlz transitions occur in the same access time windows as valid data transitions. these parameters are not reference d to a specific voltage level but specify when the device outp ut is no longer driving (h z), or begins driving (lz). 11. the maximum limit for this pa rameter is not a device limit. the device will operate with a greater value for this parameter , but system performance (bus turnar ound) will degrade accordingly. 12. the specific requirement is that dqs be valid (high, low, or at some point on a valid transiti on) on or before this ck edge . a valid transition is defined as monotonic and meeting the input slew rate specifications of the device. when no writes were prev i- ously in progress on the bus, dqs will be transitioning from hi gh-z to logic low. if a previous write was in progress, dqs coul d be high, low, or transitioning from high to low at this time, depending on tdqss. 13. a maximum of eight auto refresh commands ca n be posted to any given ddr sdram device. 14. for command/address input slew rate 1.0 v/ns. 15. for command/address input slew rate 0.5 v/ns and 1.0 v/ns 16. for ck & / ck slew rate 1.0 v/ns (single-ended) 17. these parameters guarantee device timing, but they are not necessarily tested on each device. they may be guaranteed by device design or tester correlation. 18. slew rate is measured between voh(ac) and vol(ac). 19. min (tcl, tch) refers to the smaller of the actual clock low time and the actual clock high time as provided to the device (i.e. this value can be greater than the minimum specification limits for tcl and tch). for example, tcl and tch are = 50% of the period, less the half period jitter (tjit(hp)) of the clock source, and less th e half period jitter due to cros stalk (tjit(crosstalk)) into the clock traces. figure: timing reference load vddq 50 output (vout) 30 pf
rev. 1.2 / feb. 2006 12 11 200pin ddr sd ram so-dimms 20.tqh = thp - tqhs, where: thp = minimum half clock period for any given cycle and is defined by clock high or clock low (tch, tcl). tqhs accounts fo r 1) the pulse duration distortion of on-chip clock circuits; and 2) the worst case push--out of dqs on one transition followed by the worst case pull--in of dq on the next transition, both of which are, separately, due to data pin skew and output pattern effect s, and p-channel to n-channel vari ation of the output drivers. 21. tdqsq: consists of data pin skew and output pattern effects, and p-channel to n-channel variation of the output drivers for any g iven cycle. 22. tdal = (twr/tck) + (trp/tck) for each of the terms above, if not alre ady an integer, round to the next highest integer. example: for ddr266b at cl=2.5 and tck=7.5 ns tdal = ((15 ns / 7.5 ns) + (20 ns / 7.5 ns)) clocks = ((2) + (3)) clocks = 5 clocks 23. in all circumstances, txsnr can be satisfied using txsnr = trfcmin + 1*tck 24. the only time that the clock frequency is al lowed to change is duri ng self-refresh mode. 25. if refresh timing or tds/tdh is violated, data corruption may occur and the data must be re-written with valid data before a valid read can be executed.
rev. 1.2 / feb. 2006 13 11 200pin ddr sd ram so-dimms system characteristics conditions for ddr sdrams the following tables are described specification parameters that required in systems using ddr devices to ensure proper performannce. these characteristics are for system simulation purposes and are guaranteed by design. input slew rate for dq/dm/dqs (table a.) address & control input setup & hold time derating (table b.) dq & dm input setup & hold time derating (table c.) dq & dm input setup & hold time de rating for rise/fall delta slew rate (table d.) output slew rate characteris tics (for x4, x8 devices) (table e.) output slew rate character istics (for x16 device) (table f.) output slew rate matchi ng ratio characteristics (table g.) ac characteristics ddr400 ddr333 ddr266 ddr200 unit note parameter symbol min max min max min max min max dq/dm/dqs input slew rate measured between vih(dc), vil(dc) and vil(dc), vih(dc) dcslew 0.5 4.0 0.5 4.0 0.5 4.0 0.5 4.0 v/ns 1,12 input slew rate delta tis delta tih unit note 0.5 v/ns 0 0 ps 9 0.4 v/ns +50 0 ps 9 0.3 v/ns +100 0 ps 9 input slew rate delta tds delta tdh unit note 0.5 v/ns 0 0 ps 11 0.4 v/ns +75 0 ps 11 0.3 v/ns +150 0 ps 11 input slew rate delta tds delta tdh unit note 0.0 ns/v 00ps10 0.25 ns/v +50 +50 ps 10 0.5 ns/v +100 +100 ps 10 slew rate characteristic typical range (v/ns) minimum (v/ns) maximum (v/ns) note pullup slew rate 1.2 - 2.5 1.0 4.5 1,3,4,6,7,8 pulldown slew rate 1.2 - 2.5 1.0 4.5 2,3,4,6,7,8 slew rate characteristic typical range (v/ns) minimum (v/ns) maximum (v/ns) note pullup slew rate 1.2 - 2.5 1.0 4.5 1,3,4,6,7,8 pulldown slew rate 1.2 - 2.5 1.0 4.5 2,3,4,6,7,8 slew rate characteristic ddr266a ddr266b ddr200 note parameter min max min max min max output slew rate matching ratio (pullup to pulldown) - - - - 0.71 1.4 5,12
rev. 1.2 / feb. 2006 14 11 200pin ddr sd ram so-dimms note: 1. pullup slew rate is characterized under the test conditions as shown in below figure. 2. pulldown slew rate is measured under the test conditions shown in below figure. 3. pullup slew rate is measured between (vddq/2 - 320 mv 250mv) pulldown slew rate is measured between (vddq/2 + 320mv 250mv) pullup and pulldown slew rate conditions are to be met fo r any pattern of data, including all outputs switching and only on e output switching. example: for typical slew, dq0 is switching for minimum slew rate, all dq bits are switching worst case pattern for maximum slew rate, only one dq is switching from either high to low, or low to high. the remaining dq bi ts remain the same as for previous state. 4. evaluation conditions typical: 25 o c (ambient), vddq = nominal, typical process minimum: 70 o c (ambient), vddq = mini mum, slow-slow process maximum: 0 o c (ambient), vddq = maximum, fast-fast process 5. the ratio of pullup slew rate to pulldown slew rate is specified for the same temperature and voltage, over the entire tempe rature and voltage range. for a given ou tput, it represents the maximum difference betw een pullup and pulldown drivers due to process variation. 6. verified under typical condit ions for qualification purposes. 7. tsop-ii package devices only. 8. only intended for operation up to 256 mbps per pin. 9. a derating factor will be used to increase tis and tih in the case where the input slew rate is below 0.5 v/ns as shown in t able b. the input slew rate is based on the lesser of the slew rates dete rmined by either vih(ac) to vil( ac) or vih(dc) to vil(dc), sim - ilarly for rising transitions. 10. a derating factor will be used to increase tds and tdh in the case where dq, dm, and dqs slew rates differ, as shown in tab les c & d. input slew rate is based on the larger of ac-ac delta rise, fall rate and dc-dc delta rise, fall rate. input slew rate is based on the lesser of the slew rates determined by either vih(ac) to vi l(ac) or vih(dc) to vil(dc), sim ilarly for rising transitions. t he delta rise/fall rate is calculated as: {1/(slew rate1)} - {1/(slew rate2)} for example: if slew rate 1 is 0.5 v/ns and slew rate 2 is 0.4 v/ns, then the delta rise, fall rate is -0.5 ns/v. using the table given , this would result in the need for an increase in tds and tdh of 100ps. 11. table c is used to increase tds and tdh in the case where th e i/o slew rate is below 0.5 v/ns . the i/o slew rate is based o n the lesser of the ac-ac slew rate and the dc-dc slew rate. the input slew rate is based on the lesser of the slew rates determined by either vih(ac) to vil(ac) or vih(dc) to vi l(dc), and similarly fo r rising transitions. 12. dqs, dm, and dq input slew rate is specified to prevent double clocking of data and preserve setup and hold times. signal t ran- sitions through the dc region must be monotonic. 50 output (vout) vssq test point figure: pullup slew rate vddq 50 test point output (vout) figure: pulldown slew rate
rev. 1.2 / feb. 2006 15 11 200pin ddr sd ram so-dimms simplified command truth table note : 1. dm states are don?t care. refer to below write mask truth table. 2. op code(operand code) consists of a 0 ~a 12 and ba 0 ~ba 1 used for mode registering during extended mrs or mrs. before entering mode register set mode, all banks must be in a precharge state and mrs command can be issued after trp period from precharge command. 3. if a read with autoprecharge command is detected by memory component in ck(n), then there will be no command presented to activated bank until ck(n+bl/2+trp). 4. if a write with autoprecharge command is detected by memory component in ck(n), then there will be no command presented to activated bank until ck(n+bl/2+ 1+twr+trp). write recovery time(twr) is needed to guarantee that the last data has been completely written. 5. if a10/ap is high when row precharge command being issued, ba0 /ba1 are ignored and all banks are selected to be precharged. write mask truth table note: 1. write mask command masks burst write data with reference to ldqs/udqs(data strobes) and it is not related with read data. in case of x16 data i/o, ldm and udm control lowe r byte(dq0~7) and upper byte(dq8~15) respectively. command cken-1 cken /cs /ras /cas /we addr a10/ap ba note extended mode register set h x llll op code 1,2 mode register set h x llll op code 1,2 device deselect hx hxxx x1 no operation lhhh bank active h x l l h h ra v 1 read h x lhlhca l v 1 read with autoprecharge h1,3 write hxlhllca l v 1 write with autoprecharge h1,4 precharge all banks hxllhlx hx1,5 precharge selected bank lv1 read burst stop h x l h h l x 1 auto refresh h h lllh x 1 self refresh entryh l lllh x 1 exit l h hxxx 1 lhhh precharge power down mode entry h l hxxx x 1 lhhh 1 exit l h hxxx 1 lhhh 1 active power down mode entry h l hxxx x 1 lvvv 1 exit l h x 1 function cken-1 cken /cs, /ras, /cas, /we dm addr a10/ap ba note data write h x x l x 1 data-in mask h x x h x 1 ( h=logic high level, l=logic low level, x=don?t care, v=va lid data input, op code=operand code, nop=no operation )
rev. 1.2 / feb. 2006 16 11 200pin ddr sd ram so-dimms 1gb, 128m x 64 unbuffered so-dimm: hymd512m646c[l]fp8 package dimensions front 31.75 mm 20.00 mm 1 39 41 199 2.00 mm component keepout area 2.00 mm back side 67.60 mm 3.8mm max. 1.1mm max. millimeters inches un it :
rev. 1.2 / feb. 2006 17 11 200pin ddr sd ram so-dimms revision history revision history date remark 1.0 first version release mar. 2005 1.1 leaded products removed idd specification revised july 2005 1.2 idd6 specification revised feb. 2006

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